PHX14NQ20T Datasheet, PDF (1/9 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

Philips Semiconductors
N-channel TrenchMOS transistor
Product specification
PHX14NQ20T , PHF14NQ20T
FEATURES
• ’Trench’ technology
• Low on-state resistance
• Fast switching
SYMBOL
d
g
s
QUICK REFERENCE DATA
V_DSS = 200 V
I_D = 7.6 A
R_DS(ON) ≤ 230 mΩ
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic full pack envelope using ’trench’ technology.
The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching
applications.
The PHX14NQ20T is supplied in the SOT186A (FPAK) conventional leaded package.
PINNING
SOT186A (FPAK)
SOT186 (FPAK)
PIN
DESCRIPTION
case
1 gate
case
2 drain
3 source
case isolated
12 3
12 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
V_DSS
V_DGR
V_GS
I_D
I_DM
P_D
T_j, T_stg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
T_j = 25 ˚C to 150˚C
T_j = 25 ˚C to 150˚C; R_GS = 20 kΩ
T_hs = 25 ˚C; V_GS = 10 V
T_hs = 100 ˚C; V_GS = 10 V
T_hs = 25 ˚C
T_hs = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
200
200
± 20
7.6
4.8
30
30
150
UNIT
V
V
V
A
A
A
W
˚C
November 2000
1
Rev 1.100