PHX14NQ20T Datasheet, PDF (5/9 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

Philips Semiconductors
N-channel TrenchMOS transistor
Product specification
PHX14NQ20T , PHF14NQ20T
Drain current, ID (A)
28
24
20
16
12
150 C
Tj = 25 C
8
4
0
0
2
4
6
8
10
Gate-source voltage, VGS (V)
Fig.7. Typical transfer characteristics.
I_D = f(V_GS) ; conditions: V_DS = 25 V; parameter T_j
Transconductance, gfs (S)
20
15
10
5
0
0
4
8
12
16
20
24
28
ID / (A)
Fig.8. Typical transconductance, T_j = 25 ˚C.
g_fs = f(I_D); conditions: V_DS = 25 V
a
2.5
Rds(on) normalised to 25 deg C
2
1.5
1
0.5
-70
-20
30
80
130
Ths / deg C
Fig.9. Normalised drain-source on-state resistance.
a = R_DS(ON)/R_{DS(ON)25 ˚C} = f(T_j); I_D = 7 A; V_GS = 10 V
5 ^{VGS(TO) / V}
4.5 max
4
3.5 ^typ
3
2.5 min
2
1.5
1
0.5
0
-100
-50
0 _{Tj / C} 50
100
150
Fig.10. Gate threshold voltage.
V_GS(TO) = f(T_j); conditions: I_D = 1 mA; V_DS = V_GS
1E-01
Sub-Threshold Conduction
1E-02
1E-03
2%
typ
98%
1E-04
1E-05
1E-06
0
1
2
3
4
5
Fig.11. Sub-threshold drain current.
I_D = f(V_GS); conditions: T_j = 25 ˚C; V_DS = V_GS
Capacitances, Ciss, Coss, Crss (pF)
10000
1000
100
Ciss
Coss
Crss
10
0
10
20
30
40
Drain-Source Voltage, VDS (V)
Fig.12. Typical capacitances, C_iss, C_oss, C_rss.
C = f(V_DS); conditions: V_GS = 0 V; f = 1 MHz
November 2000
5
Rev 1.100