PHU78NQ03LT Datasheet, PDF (6/12 Pages) NXP Semiconductors – N-channel TrenchMOSTM logic level FET

Philips Semiconductors
PHP78NQ03LT
N-channel TrenchMOS logic level FET
60
10 V 4.5 V
I_D 6 V
(A) _{5 V}
40
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4V
3.5 V
0.06
R_DSon
(Ω)
0.04
V_GS = 3 V
3.5 V
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20
V_GS = 3 V
0
0
0.5
1
1.5
2
V_DS (V)
0.02
0
0
4V
5V
10 V
6V
20
40
60
I_D (A)
T_j = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
T_j = 25 °C
Fig 6. Drain-source on-state resistance as a function
of drain current; typical values
40
I_D
(A)
V_DS > I_D x R_DSon
30
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2
a
1.5
03af18
20
1
175 °C Tj = 25 °C
10
0.5
0
1
2
3
4
V_GS (V)
T_j = 25 °C and 175 °C; V_DS > I_D × R_DSon
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0
-60
0
60
120
180
T_j (°C)
a = --------^R---^D----^S---^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
9397 750 15086
Product data sheet
Rev. 05 — 9 June 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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