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| PHU78NQ03LT Datasheet, PDF (5/12 Pages) NXP Semiconductors – N-channel TrenchMOSTM logic level FET | |||
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Philips Semiconductors
PHP78NQ03LT
N-channel TrenchMOS logic level FET
6. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise speciï¬ed.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS(th) gate-source threshold voltage
IDSS
drain-source leakage current
IGSS
RDSon
gate-source leakage current
drain-source on-state resistance
Dynamic characteristics
ID = 250 µA; VGS = 0 V
Tj = 25 °C
Tj = â55 °C
ID = 1 mA; VDS = VGS; Figure 9 and 10
Tj = 25 °C
Tj = 175 °C
Tj = â55 °C
VDS = 25 V; VGS = 0 V
Tj = 25 °C
Tj = 150 °C
VGS = ±15 V; VDS = 0 V
VGS = 5 V; ID = 25 A; Figure 6 and 8
Tj = 25 °C
Tj = 175 °C
VGS = 10 V; ID = 25 A; Figure 6 and 8
QG(tot) total gate charge
QGS
gate-source charge
QGD
gate-drain (Miller) charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
ID = 50 A; VDS = 15 V; VGS = 5 V;
Figure 11
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Figure 13
VDS = 15 V; RL = 0.6 â¦; VGS = 10 V;
RG = 5.6 â¦
VSD
source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 12
trr
reverse recovery time
Qr
recovered charge
IS = 20 A; dIS/dt = â100 A/µs; VGS = 0 V;
VR = 25 V
Min Typ Max Unit
25 -
-
V
22 -
-
V
1
1.5 2
V
0.5 -
-
V
-
-
2.2 V
-
-
10 µA
-
-
500 µA
-
10 100 nA
-
11.5 13.5 mâ¦
-
20.7 24.3 mâ¦
-
7.65 9
mâ¦
-
13 -
nC
-
4.8 -
nC
-
4.2 5.6 nC
-
1074 -
pF
-
389 -
pF
-
156 -
pF
-
20 33 ns
-
92 130 ns
-
30 48 ns
-
40 60 ns
-
0.95 1.2 V
-
40 -
ns
-
32 -
nC
9397 750 15086
Product data sheet
Rev. 05 â 9 June 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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