PHU78NQ03LT Datasheet, PDF (3/12 Pages) NXP Semiconductors – N-channel TrenchMOSTM logic level FET

Philips Semiconductors
PHP78NQ03LT
N-channel TrenchMOS logic level FET
120
P_der
(%)
80
03aa16
120
I_der
(%)
80
03aa24
40
40
0
0
50
100
150
200
T_mb (°C)
P_der = _P-------^P----^t--^o---^t------- × 100%
t o t ( 25 ^°C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature
10³
I_D
(A)
10²
Limit R_DSon = V_DS / I_D
10
DC
0
0
50
100
150
200
T_mb (°C)
I_der = -_I-------^I--^D--------- × 100%
D ( 25 ^°C )
Fig 2. Normalized continuous drain current as a
function of mounting base temperature
003aaa175
t_p = 10 µ s
100 µs
1 ms
10 ms
100 ms
1
1
10
10²
V_DS (V)
T_mb = 25 °C; I_DM is single pulse; V_GS = 5 V
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9397 750 15086
Product data sheet
Rev. 05 — 9 June 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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