PHP83N06T Datasheet, PDF (6/13 Pages) NXP Semiconductors – TrenchMOS Standard Level FET

Philips Semiconductors
PHP83N06T
TrenchMOS™ Standard Level FET
80
I_D
T_j = 25 ºC ^{10 V 7 V}
(A)
60
03ag67
6V
5.5 V
80
I_D ^VDS ^{> I}D ^{x R}DSon
(A)
60
03afg69
40
20
0
0
5V
V_GS = 4.5 V
0.4
0.8
1.2
1.6
2
V_DS (V)
40
20
0
0
175 ºC
T_j = 25 ºC
2
4
6
8
V_GS (V)
T_j = 25 °C; t_p = 300 µs
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C and 175 °C; V_DS > I_D × R_DSon
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
0.02
03ag68
2.4
R_DSon T_j = 25 ºC
V_GS = 6 V
(Ω)
a
0.015
1.8
7V
0.01
10 V
1.2
0.005
0.6
!== &
0
0
20
40
60
80
I_D (A)
0
-60
0
60
120 _{Tj (oC)} 180
T_j = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
a = -------^R----^D----^S--^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 09122
Product data
Rev. 01 — 11 January 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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