PHP83N06T Datasheet, PDF (2/13 Pages) NXP Semiconductors – TrenchMOS Standard Level FET

Philips Semiconductors
PHP83N06T
TrenchMOS™ Standard Level FET
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
V_DS
I_D
P_tot
T_j
R_DSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
T_mb = 25 °C; V_GS = 10 V
T_mb = 25 °C
V_GS = 10 V; I_D = 25 A
T_j = 25 °C
T_j = 175 °C
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DS
V_DGR
V_GS
I_D
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
I_DM
peak drain current
P_tot
total power dissipation
T_stg
storage temperature
T_j
operating junction temperature
Source-drain diode
R_GS = 20 kΩ
T_mb = 25 °C; V_GS = 10 V; Figure 2 and 3
T_mb = 100 °C; V_GS = 10 V; Figure 2
T_mb = 25 °C; pulsed; t_p ≤ 10 µs; Figure 3
T_mb = 25 °C; Figure 1
I_DR
reverse drain current (DC)
I_DRM
pulsed reverse drain current
Avalanche ruggedness
T_mb = 25 °C
T_mb = 25 °C; pulsed; t_p ≤ 10 µs
E_DS(AL) non-repetitive avalanche energy
unclamped inductive load; I_D = 65 A;
V_DS ≤ 55 V; V_GS = 10 V; R_GS = 50 Ω;
starting T_mb = 25 °C
Typ
Max Unit
-
60
V
-
75
A
-
166
W
-
175
°C
9
12
mΩ
-
24
mΩ
Min
Max Unit
-
60
V
-
60
V
-
±20
V
-
75
A
-
59
A
-
240
A
-
166
W
−55
+175 °C
−55
+175 °C
-
75
A
-
240
A
-
211
mJ
9397 750 09122
Product data
Rev. 01 — 11 January 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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