PHP83N06T Datasheet, PDF (3/13 Pages) NXP Semiconductors – TrenchMOS Standard Level FET

Philips Semiconductors
PHP83N06T
TrenchMOS™ Standard Level FET
120
P_der
(%)
80
03aa16
120
I_der
(%)
80
03ag75
40
40
0
0
50
100
P_der
=
-------^P----^t--^o--^t-------
P
×
100
%
t o t ( 25 ^°C )
150
200
T_mb (^oC)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
0
0
50
100
150
200
T_mb (ºC)
V_GS ≥ 4.5 V
I_der = -_I------^I---^D-------- × 100%
D ( 25 ^°C )
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
103
I_D
R_DSon = V_DS / I_D
(A)
102
03ag66
t_p = 10 µs
100 µs
1 ms
10
DC
10 ms
100 ms
1
1
10
102
V_DS (V)
T_mb = 25 °C; I_DM single pulse; V_GS = 10 V
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 09122
Product data
Rev. 01 — 11 January 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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