PHP71NQ03LT Datasheet, PDF (6/14 Pages) NXP Semiconductors – TrenchMOS logic level FET

Philips Semiconductors
PHP/PHB/PHD71NQ03LT
TrenchMOS™ logic level FET
80
ID ^{Tj = 25 °C}
(A)
60
40
03ai77
10 V 7 V 6 V 5.5 V
5V
4.5 V
4V
80
ID ^{VDS > ID x RDSon}
(A)
60
40
03ai79
20
3.5 V
20
VGS = 3 V
0
0
0.2
0.4
0.6
0.8
1
VDS (V)
175 °C
Tj = 25 °C
0
0
2
4
6
VGS (V)
T_j = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C and 175 °C; V_DS > I_D x R_DSon
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
20
03ai78
2
RDSon ^{Tj = 25 °C}
(mΩ)
VGS = 4.5 V
a
15
5V
1.5
5.5 V
6V
10
7V
1
10 V
5
0.5
03af18
0
0
20
40
60
80
ID (A)
T_j = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
0
-60
0
60
120
180
Tj (°C)
a = --------^R---^D----^S---^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 09821
Product data
Rev. 01 — 25 June 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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