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PHP71NQ03LT Datasheet, PDF (5/14 Pages) NXP Semiconductors – TrenchMOS logic level FET
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Philips Semiconductors
PHP/PHB/PHD71NQ03LT
TrenchMOS™ logic level FET
5. Characteristics
Table 4: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS(th) gate-source threshold voltage
IDSS
drain-source leakage current
IGSS
RDSon
gate-source leakage current
drain-source on-state resistance
Dynamic characteristics
ID = 250 µA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
ID = 1 mA; VDS = VGS; Figure 9
Tj = 25 °C
Tj = 175 °C
Tj = −55 °C
VDS = 30 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = ±20 V; VDS = 0 V
VGS = 5 V; ID = 25 A; Figure 7 and 8
Tj = 25 °C
Tj = 175 °C
VGS = 10 V; ID = 25 A; Figure 7
Qg(tot) total gate charge
Qgs
gate-source charge
Qgd
gate-drain (Miller) charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
ID = 50 A; VDD = 15 V; VGS = 5 V; Figure 13
VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 11
VDD = 15 V; ID = 25 A; VGS = 4.5 V; RG = 5.6 Ω
VSD
source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 12
trr
reverse recovery time
IS = 10 A; dIS/dt = −100 A/µs; VGS = 0 V
Qr
recovered charge
Min Typ Max Unit
30 -
-
V
27 -
-
V
1 1.9 2.5 V
0.6 -
-
V
-
-
2.9 V
-
0.05 1 µA
-
-
500 µA
-
10 100 nA
-
12 15.2 mΩ
-
21.6 27.4 mΩ
-
8 10 mΩ
-
13.2 -
nC
-
5.3 -
nC
-
4.6 -
nC
-
1220 -
pF
-
330 -
pF
-
140 -
pF
-
15 -
ns
-
150 -
ns
-
13.5 -
ns
-
18 -
ns
-
0.9 1.2 V
-
29 -
ns
-
20 -
nC
9397 750 09821
Product data
Rev. 01 — 25 June 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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