PHP55N03LTA Datasheet, PDF (6/14 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PHP55N03LTA series
N-channel enhancement mode field-effect transistor
60
I_D
T_j = 25 ºC ^{10 V 5 V 4.5 V}
(A)
45
30
03ae65
4V
3.5 V
60
I_D ^VDS ^{> I}D ^{x R}DSon
(A)
45
Tj = 25 ºC
30
03ae67
175 ºC
15
3V
15
V_GS = 2.5 V
0
0
0.4
0.8
1.2
1.6
2
V_DS (V)
0
0
1
2
3
4
5
V_GS (V)
T_j = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C and 175 °C; V_DS > I_D x R_DSon
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
0.03
03ae66
2
T_j = 25 ºC
V_GS = 4 V
a
R_DSon
(Ω)
1.6
0.02
4.5 V
1.2
5V
0.8
0.01
10 V
0.4
03ad57
0
0
15
30
45
60
I_D (A)
0
-60
0
60
120 _{Tj (ºC)} 180
T_j = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
a = -------^R----^D----^S--^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 08642
Product data
Rev. 02 — 2 August 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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