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PHP55N03LTA Datasheet, PDF (5/14 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor
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Philips Semiconductors
PHP55N03LTA series
N-channel enhancement mode field-effect transistor
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS(th) gate-source threshold voltage
IDSS
drain-source leakage current
IGSS
RDSon
gate-source leakage current
drain-source on-state resistance
Dynamic characteristics
gfs
forward transconductance
Qg(tot) total gate charge
Qgs
gate-source charge
Qgd
gate-drain (Miller) charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
turn-on delay time
tr
turn-on rise time
td(off)
turn-off delay time
tf
turn-off fall time
Source-drain diode
VSD
source-drain (diode forward)
voltage
Conditions
ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
ID = 1 mA; VDS = VGS; Figure 9
Tj = 25 °C
Tj = 175 °C
Tj = −55 °C
VDS = 25 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = ±5 V; VDS = 0 V
VGS = 5 V; ID = 25 A; Figure 7 and 8
Tj = 25 °C
Tj = 175 °C
VGS = 10 V; ID = 25 A
Tj = 25 °C
VDS = 25 V; ID = 25 A
ID = 55 A; VDD = 15 V; VGS = 5 V;
Figure 13
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Figure 11
VDD = 15 V; ID = 55 A; VGS = 10 V;
RG = 5 Ω; resistive load
IS = 25 A; VGS = 0 V; Figure 12
IS = 55 A; VGS = 0 V
Min Typ Max Unit
25
-
-
V
22
-
-
V
1
1.5 2
V
0.5 -
-
V
-
-
2.3 V
-
0.05 10
µA
-
-
500 µA
-
10
100 nA
-
15
18
mΩ
-
25.5 30.6 mΩ
-
11
14
mΩ
-
32
-
S
-
20
-
nC
-
8
-
nC
-
7
-
nC
-
950 -
pF
-
340 -
pF
-
230 -
pF
-
8
15
ns
-
45
80
ns
-
45
80
ns
-
40
60
ns
-
0.95 1.2 V
-
1.2 -
V
9397 750 08642
Product data
Rev. 02 — 2 August 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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