PHP55N03LTA Datasheet, PDF (3/14 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PHP55N03LTA series
N-channel enhancement mode field-effect transistor
120
Pder
(%)
80
03aa16
120
I _der
(%)
80
03aa24
40
40
0
0
50
100
150
200
Tmb (oC)
P_der
=
-------^P----^t--^o--^t-------
P
×
100
%
t o t ( 25 ^°C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
0
0
50
100
150
200
T_mb (^oC)
I_der
=
-------^I---^D--------
I
× 100%
D ( 25 ^°C )
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
103
I_D
(A)
R_DSon = V_DS / I_D
102
tp = 10 µs
100 µs
03ae64
10
P
δ
=
tp
T
tp
t
T
D.C.
1 ms
10 ms
100 ms
1
1
10
102
V_DS (V)
T_mb = 25 °C; I_DM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 08642
Product data
Rev. 02 — 2 August 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
3 of 14