PHP152NQ03LTA Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

Philips Semiconductors
PHP/B152NQ03LTA
N-channel TrenchMOS™ logic level FET
40
ID ^{10 V 5 V 3 V}
(A)
30
2.8 V
003aaa519
VGS = 2.7 V
40
ID
(A)
30
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2.6 V
20
Tj = 175 °C
20
2.5 V
2.4 V
25 °C
10
2 .3 V
10
2.1 V
0
0
0.2
0.4
0.6
0.8
1
VDS (V)
0
0
1
2
3
VGS (V)
T_j = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C and 175 °C; V_DS > I_D x R_DSon
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
20
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2
RDSon ^{2.4 V 2.5 V 2.6 V}
2.7 V
2.8 V
a
(mΩ)
15
1.5
003aaa627
10
1
VGS = 3 V
5
5V
10 V
0
0
10
20
30
40
ID (A)
T_j = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
0.5
0
-60
0
60
120
180
Tj (°C)
a = --------^R---^D----^S---^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 12829
Product data
Rev. 01 — 05 March 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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