PHP152NQ03LTA Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

Philips Semiconductors
PHP/B152NQ03LTA
N-channel TrenchMOS™ logic level FET
120
Pder
(%)
80
03aa16
40
0
0
50
100
150
200
Tmb (°C)
P_der
=
-------^P----^t--^o---^t-------
P
×
100%
t o t ( 25 ^°C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
103
ID
(A)
102
LImit RDSon = VDS / ID
10
120
Ider
(%)
80
003aaa630
40
0
0
50
100
150
200
Tmb (°C)
I_der
=
--------^I--^D---------
I
×
100%
D ( 25 ^°C )
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
003aaa517
tp = 10 µs
100 µs
1 ms
DC
10 ms
100 ms
1
10-1
1
10
102
VDS (V)
T_mb = 25 °C; I_DM is single pulse; V_GS = 10 V
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 12829
Product data
Rev. 01 — 05 March 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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