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PHP152NQ03LTA Datasheet, PDF (5/13 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET
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Philips Semiconductors
PHP/B152NQ03LTA
N-channel TrenchMOS™ logic level FET
6. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS(th) gate-source threshold voltage
IDSS
drain-source leakage current
IGSS
RDSon
gate-source leakage current
drain-source on-state resistance
Dynamic characteristics
ID = 250 µA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
ID = 1 mA; VDS = VGS; Figure 9
Tj = 25 °C
Tj = 175 °C
Tj = −55 °C
VDS = 25 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = ±15 V; VDS = 0 V
VGS = 5 V; ID = 25 A; Figure 7 and 8
Tj = 25 °C
Tj = 175 °C
VGS = 10 V; ID = 25 A; Figure 7 and 8
Tj = 25 °C
Tj = 175 °C
25 -
-
V
22 -
-
V
1
1.5 2
V
0.5 -
-
V
-
-
2.2 V
-
-
1
µA
-
-
500 µA
-
10 100 nA
-
4.2 5
mΩ
-
6.8 8.7 mΩ
-
3.4 4
mΩ
-
5.5 6.9 mΩ
Qg(tot) total gate charge
Qgs
gate-source charge
Qgd
gate-drain (Miller) charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
ID = 50 A; VDD = 15 V; VGS = 5 V; Figure 13 -
36 -
nC
-
13 -
nC
-
12 -
nC
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Figure 11
-
3140 -
pF
-
1040 -
pF
-
354 -
pF
VDD = 15 V; ID = 25 A;
VGS = 5 V; RG = 5.6 Ω
-
37 -
ns
-
87 -
ns
-
71 -
ns
-
46 -
ns
VSD
source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 12
trr
reverse recovery time
Qr
recovered charge
IS = 10 A; dIS/dt = −100 A/µs;
VGS = 0 V; VR = 25 V
-
0.85 1.2 V
-
50 -
ns
-
24 -
nC
9397 750 12829
Product data
Rev. 01 — 05 March 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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