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| PDTC144WMB_15 Datasheet, PDF (6/11 Pages) NXP Semiconductors – NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 22 kΩ | |||
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NXP Semiconductors
3
Cc
(pF)
2
1
PDTC144WMB
NPN resistor-equipped transistor; R1 = 47 kâ¦, R2 = 22 kâ¦
006aad055
103
fT
(MHz)
102
006aac757
0
0
10
20
30
40
50
VCB (V)
f = 1 MHz; Tamb = 25 °C
Fig 8. Collector capacitance as a function of
collector-base voltage; typical values of built-in
transistor
10
10-1
1
10
102
IC (mA)
VCE = 5 V; Tamb = 25 °C
Fig 9. Transition frequency as a function of collector
current; typical values of built-in transistor
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PDTC144WMB
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 2 July 2012
© NXP B.V. 2012. All rights reserved.
6 of 11
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