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PDTC144WMB_15 Datasheet, PDF (1/11 Pages) NXP Semiconductors – NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 22 kΩ | |||
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PDTC144WMB
NPN resistor-equipped transistor; R1 = 47 kâ¦, R2 = 22 kâ¦
Rev. 1 â 2 July 2012
Product data sheet
1. Product profile
1.1 General description
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small
DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
PNP complement: PDTA144WMB.
1.2 Features and benefits
ï® 100 mA output current capability
ï® Reduces component count
ï® Built-in bias resistors
ï® Reduces pick and place costs
ï® Simplifies circuit design
ï® AEC-Q101 qualified
ï® Leadless ultra small SMD plastic
package
ï® Low package height of 0.37 mm
1.3 Applications
ï® Low-current peripheral driver
ï® Control of IC inputs
ï® Replaces general-purpose transistors
in digital applications
ï® Mobile applications
1.4 Quick reference data
Table 1.
Symbol
VCEO
IO
R1
R2/R1
Quick reference data
Parameter
collector-emitter
voltage
output current
bias resistor 1 (input)
bias resistor ratio
Conditions
open base
Tamb = 25 °C
Min Typ Max Unit
-
-
50 V
-
-
100 mA
33
47
61
kâ¦
0.37 0.47 0.57
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