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| PDTC144WMB_15 Datasheet, PDF (4/11 Pages) NXP Semiconductors – NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 22 kΩ | |||
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NXP Semiconductors
PDTC144WMB
NPN resistor-equipped transistor; R1 = 47 kâ¦, R2 = 22 kâ¦
103
Zth(j-a)
(K/W)
102
10
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
006aab603
1
10â5
10â4
10â3
10â2
10â1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
ICBO
collector-base cut-off VCB = 50 V; IE = 0 A; Tamb = 25 °C
current
ICEO
collector-emitter cut-off VCE = 30 V; IB = 0 A; Tamb = 25 °C
current
VCE = 30 V; IB = 0 A; Tj = 150 °C
IEBO
emitter-base cut-off
VEB = 5 V; IC = 0 A; Tamb = 25 °C
current
hFE
VCEsat
DC current gain
collector-emitter
saturation voltage
VCE = 5 V; IC = 5 mA; Tamb = 25 °C
IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C
VI(off)
VI(on)
R1
R2/R1
off-state input voltage
on-state input voltage
bias resistor 1 (input)
bias resistor ratio
VCE = 5 V; IC = 100 µA; Tamb = 25 °C
VCE = 0.3 V; IC = 2 mA; Tamb = 25 °C
Tamb = 25 °C
CC
collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
fT
transition frequency
VCE = 5 V; IC = 10 mA; f = 100 MHz;
[1]
Tamb = 25 °C
[1] Characteristics of built-in transistor.
Min Typ Max Unit
-
-
100 nA
-
-
1
µA
-
-
5
µA
-
-
110 µA
60 -
-
-
-
150 mV
-
1.7 1.2 V
4
2.7 -
V
33
47
61
kâ¦
0.37 0.47 0.57
-
-
2.5 pF
-
230 -
MHz
PDTC144WMB
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 2 July 2012
© NXP B.V. 2012. All rights reserved.
4 of 11
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