English
Language : 

BYC8X-600P_15 Datasheet, PDF (6/11 Pages) NXP Semiconductors – Hyperfast power diode
◁
NXP Semiconductors
BYC8X-600P
Hyperfast power diode
11. Characteristics
Table 8. Characteristics
Symbol
Parameter
Conditions
Static characteristics
VF
forward voltage
IF = 8 A; Tj = 25 °C; Fig. 6
IF = 8 A; Tj = 125 °C; Fig. 6
IF = 8 A; Tj = 150 °C
IR
reverse current
VR = 600 V; Tj = 25 °C
VR = 600 V; Tj = 125 °C
Dynamic characteristics
Qr
recovered charge
IF = 8 A; VR = 200 V; dIF/dt = 200 A/µs;
Tj = 25 °C; Fig. 7
IF = 8 A; VR = 200 V; dIF/dt = 200 A/µs;
Tj = 125 °C; Fig. 7
trr
reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 200 A/µs;
Tj = 25 °C; Fig. 7
IF = 8 A; VR = 400 V; dIF/dt = 500 A/µs;
Tj = 25 °C; Fig. 7
IRM
peak reverse recovery IF = 8 A; VR = 200 V; dIF/dt = 200 A/µs;
current
Tj = 25 °C; Fig. 7
IF = 8 A; VR = 200 V; dIF/dt = 200 A/µs;
Tj = 125 °C; Fig. 7
Min Typ Max Unit
-
-
3.4 V
-
1.5 1.9 V
-
1.4 -
V
-
-
20
µA
-
-
200 µA
-
17
-
nC
-
90
-
nC
-
12
18
ns
-
19
-
ns
-
-
2.2 A
-
-
6
A
BYC8X-600P
Product data sheet
All information provided in this document is subject to legal disclaimers.
3 August 2015
© NXP Semiconductors N.V. 2015. All rights reserved
6 / 11
 ▷