BUK7830-30 Datasheet, PDF (6/10 Pages) NXP Semiconductors – TrenchMOS transistor Standard level FET

Philips Semiconductors
TrenchMOS™ transistor
Standard level FET
Product specification
BUK7830-30
VGS / V
10
8
VDS / V = 6
7830-30
24
6
4
2
0
0
5
10
15
20
25
QG / nC
Fig.13. Typical turn-on gate-charge characteristics.
V_GS = f(Q_G); conditions: I_D = 5.9 A; parameter V_DS
IF / A
60
7830-30
50
40
30
20
Tj / C = 150
25
10
0
0
0.5
1
1.5
2
VSDS / V
Fig.14. Typical reverse diode current.
I_F = f(V_SDS); conditions: V_GS = 0 V; parameter T_j
WDSS%
120
110
100
90
80
70
60
50
40
30
20
10
0
20
40
60
80 100 120 140
Tmb / C
Fig.15. Normalised avalanche energy rating.
W_DSS% = f(T_mb); conditions: I_D = 5.9 A
VGS
0
RGS
L
VDS
T.U.T.
+ ^VDD
-
-ID/100
R 01
shunt
Fig.16. Avalanche energy test circuit.
W_DSS = 0.5 ⋅ LI_D² ⋅ BV_DSS/(BV_DSS − V_DD)
+ ^VDD
RD
VDS
-
VGS
0
RG
T.U.T.
Fig.17. Switching test circuit.
December 1997
6
Rev 1.100