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| BUK7830-30 Datasheet, PDF (3/10 Pages) NXP Semiconductors – TrenchMOS transistor Standard level FET | |||
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Philips Semiconductors
TrenchMOS⢠transistor
Standard level FET
Product specification
BUK7830-30
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25ËC unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IDR
Continuous reverse drain
current
IDRM
Pulsed reverse drain current
VSD
Diode forward voltage
IF = 3.2 A; VGS = 0 V
IF = 5.9 A; VGS = 0 V
trr
Reverse recovery time
IF = 5.9 A; -dIF/dt = 100 A/µs;
Qrr
Reverse recovery charge
VGS = -10 V; VR = 25 V
MIN. TYP. MAX. UNIT
-
-
6.2 A
-
- 24.8 A
- 0.75 1.2 V
- 0.85 -
- 115 -
ns
-
0.3
-
µC
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER
WDSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
ID = 5.9 A; VDD ⤠25 V;
VGS = 10 V; RGS = 50 â¦; Tsp = 25 ËC
MIN.
-
TYP.
-
MAX. UNIT
60 mJ
December 1997
3
Rev 1.100
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