BUK7720-55A Datasheet, PDF (6/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

Philips Semiconductors
BUK7720-55A
N-channel TrenchMOS™ standard level FET
200
ID
(A) ¹⁸⁰
160
140
03nc63
VGS (V) =
20
14
12
11
10
120
9.0
100
8.5
8.0
80
7.5
7.0
60
6.5
40
6.0
20
5.5
5.0
0
4.5
0
2
4
6
8
10
VDS (V)
30
RDSon
(mΩ)
25
03nc62
20
15
10
5
10
15
20
25
VGS (V)
T_j = 25 °C; t_p = 300 µs
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C; I_D = 25 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
45
RDSon
(mΩ)
40
5.5 6 6.5 7
35
30
25
20
15
0
50
T_j = 25 °C
03nc64
8 ^{VGS (V) = 10}
100
150
ID (A)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
2.2
a
2
03nc24
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-60 -20 20 60 100 140 180
Tj (oC)
a = -------^R----^D----^S--^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 13202
Product data
Rev. 02 — 7 June 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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