BUK7720-55A Datasheet, PDF (2/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

Philips Semiconductors
BUK7720-55A
N-channel TrenchMOS™ standard level FET
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
V_DS
I_D
P_tot
T_j
R_DSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
T_mb = 25 °C; V_GS = 10 V
T_mb = 25 °C
V_GS = 10 V; I_D = 25 A
T_j = 25 °C
T_j = 150 °C
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DS
V_DGR
V_GS
I_D
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
R_GS = 20 kΩ
T_mb = 25 °C; V_GS = 10 V;
Figure 2 and 3
T_mb = 100 °C; V_GS = 10 V;
Figure 2
I_DM
peak drain current
T_mb = 25 °C; pulsed; t_p ≤ 10 µs;
Figure 3
P_tot
total power dissipation
T_stg
storage temperature
T_j
operating junction temperature
Source-drain diode
T_mb = 25 °C; Figure 1
I_DR
reverse drain current (DC)
I_DRM
peak reverse drain current
Avalanche ruggedness
T_mb = 25 °C
T_mb = 25 °C; pulsed; t_p ≤ 10 µs
E_DS(AL)S non-repetitive drain-source
avalanche energy
unclamped inductive load; I_D = 29 A;
V_DS ≤ 55 V; V_GS = 10 V; R_GS = 50 Ω;
starting T _j = 25 °C
[1] I_DM is limited by chip, not package.
Typ
Max Unit
-
55
V
-
29
A
-
32
W
-
150
°C
15
20
mΩ
-
37
mΩ
Min
-
-
-
-
-
[1]
-
−55
−55
Max Unit
55
V
55
V
±20
V
29
A
20
A
117
A
32
W
+150 °C
+150 °C
-
29
A
-
117
A
-
260
mJ
9397 750 13202
Product data
Rev. 02 — 7 June 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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