BUK7720-55A Datasheet, PDF (5/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

Philips Semiconductors
BUK7720-55A
N-channel TrenchMOS™ standard level FET
8. Characteristics
Table 5: Characteristics
T_j = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min
Static characteristics
V_(BR)DSS drain-source breakdown
I_D = 0.25 mA; V_GS = 0 V
voltage
T_j = 25 °C
55
T_j = −55 °C
50
V_GS(th)
gate-source threshold voltage I_D = 1 mA; V_DS = V_GS;
Figure 9
T_j = 25 °C
2
T_j = 150 °C
1.2
T_j = −55 °C
-
I_DSS
drain-source leakage current V_DS = 55 V; V_GS = 0 V
T_j = 25 °C
-
T_j = 150 °C
-
I_GSS
gate-source leakage current V_GS = ±20 V; V_DS = 0 V
-
R_DSon
drain-source on-state
resistance
V_GS = 10 V; I_D = 25 A;
Figure 7 and 8
T_j = 25 °C
-
T_j = 150 °C
-
Dynamic characteristics
Q_g(tot)
total gate charge
V_GS = 10 V; V_DD = 44 V;
-
Q_gs
gate-to-source charge
I_D = 25 A; Figure 14
-
Q_gd
gate-to-drain (Miller) charge
-
C_iss
input capacitance
V_GS = 0 V; V_DS = 25 V;
-
C_oss
output capacitance
f = 1 MHz; Figure 12
-
C_rss
reverse transfer capacitance
-
t_d(on)
t_r
turn-on delay time
rise time
V_DD = 30 V; R_L = 1.2 Ω;
-
V_GS = 5 V; R_G = 10 Ω
-
t_d(off)
turn-off delay time
-
t_f
fall time
-
L_d
internal drain inductance
from drain lead 6 mm from
-
package to centre of die
L_s
internal source inductance from source lead 6 mm from
-
package to source bond pad
Source-drain diode
V_SD
source-drain (diode forward) I_S = 15 A; V_GS = 0 V;
-
voltage
Figure 15
t_rr
reverse recovery time
I_S = 20 A; dI_S/dt = −100 A/µs
-
Q_r
recovered charge
V_GS = −10 V; V_DS = 30 V
-
Typ
Max
Unit
-
-
V
-
-
V
3
4
V
-
-
V
-
4.4
V
0.05
10
µA
-
500
µA
2
100
nA
15
20
mΩ
-
37
mΩ
29
-
nC
6
-
nC
14
-
nC
1 200
1 590
pF
290
360
pF
180
240
pF
15
-
ns
74
-
ns
70
-
ns
40
-
ns
4.5
-
nH
7.5
-
nH
0.85
1.2
V
45
-
ns
110
-
nC
9397 750 13202
Product data
Rev. 02 — 7 June 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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