BUK763R1-40B_15 Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK763R1-40B
N-channel TrenchMOS standard level FET
I_D ⁴⁰⁰ ₂₀
(A)
10
350
300
250
200
150
100
50
0
0
8
7
2
4
03nh33
6
V_GS = 5 V
4
6
8
10
V_DS (V)
6
R_DSon
(mΩ)
5
4
3
2
5
03nh32
10
15
20
V_GS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
10^−1
I_D
(A)
10^−2
10^−3
10^−4
10^−5
03aa35
min typ max
120
g_fs
(S)
100
80
60
40
20
03nh30
10^−6
0
2
4
6
V_GS (V)
0
0
20
40
60
I_D (A)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Forward transconductance as a function of
drain current; typical values
BUK763R1-40B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 8 February 2011
© NXP B.V. 2011. All rights reserved.
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