BUK763R1-40B_15 Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK763R1-40B
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V_DS
V_DGR
V_GS
I_D
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Conditions
T_j ≥ 25 °C; T_j ≤ 175 °C
R_GS = 20 kΩ
T_mb = 100 °C; V_GS = 10 V; see Figure 1
T_mb = 25 °C; V_GS = 10 V; see Figure 3;
see Figure 1
I_DM
peak drain current
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
I_S
source current
T_mb = 25 °C; pulsed; t_p ≤ 10 µs;
see Figure 3
T_mb = 25 °C; see Figure 2
T_mb = 25 °C
I_SM
peak source current
Avalanche ruggedness
E_DS(AL)S
non-repetitive drain-source
avalanche energy
pulsed; t_p ≤ 10 µs; T_mb = 25 °C
I_D = 75 A; V_sup ≤ 40 V; R_GS = 50 Ω;
V_GS = 10 V; T_j(init) = 25 °C; unclamped
[1] Continuous current is limited by package.
[2] Current is limited by power dissipation chip rating.
Min
-
-
-20
[1] _-
[2] _-
[1] _-
-
Max Unit
40 V
40 V
20 V
75 A
225 A
75 A
902 A
-
300 W
-55 175 °C
-55 175 °C
[2] _-
[1] _-
-
225 A
75 A
902 A
-
1.6 J
250
I_D
(A)
200
150
03nh38
120
P_der
(%)
80
03na19
100
40
Capped at 100 A due to package
50
0
0
50
100
150
200
T_mb (°C)
0
0
50
100
150
200
T_mb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
BUK763R1-40B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 8 February 2011
© NXP B.V. 2011. All rights reserved.
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