BUK763R1-40B_15 Datasheet, PDF (2/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK763R1-40B
N-channel TrenchMOS standard level FET
Table 1. Quick reference data …continued
Symbol Parameter
Conditions
Avalanche ruggedness
E_DS(AL)S
non-repetitive
drain-source
avalanche energy
Dynamic characteristics
I_D = 75 A; V_sup ≤ 40 V;
R_GS = 50 Ω; V_GS = 10 V;
T_j(init) = 25 °C; unclamped
Q_GD
gate-drain charge V_GS = 10 V; I_D = 25 A;
V_DS = 32 V; T_j = 25 °C;
see Figure 13
[1] Continuous current is limited by package.
2. Pinning information
Min Typ Max Unit
-
-
1.6 J
-
29 -
nC
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
Simplified outline
G
gate
D
drain^[1]
mb
S
source
D
mounting base; connected to
drain
2
13
SOT404 (D2PAK)
[1] It is not possible to make a connection to pin 2.
3. Ordering information
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
BUK763R1-40B
D2PAK
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
BUK763R1-40B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 8 February 2011
© NXP B.V. 2011. All rights reserved.
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