BUK751R8-40E_15 Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK751R8-40E
N-channel TrenchMOS standard level FET
Symbol
Parameter
Conditions
C_iss
input capacitance
V_GS = 0 V; V_DS = 25 V; f = 1 MHz;
C_oss
output capacitance
T_j = 25 °C; Fig. 15
C_rss
reverse transfer
capacitance
t_d(on)
t_r
turn-on delay time
rise time
V_DS = 30 V; R_L = 1.2 Ω; V_GS = 10 V;
R_G(ext) = 5 Ω
t_d(off)
turn-off delay time
t_f
fall time
L_D
internal drain
from drain lead 6mm from package to
inductance
centre of die
from upper edge of drain mounting
base to center of die
L_S
internal source
from source lead to source bonding
inductance
pad
Source-drain diode
V_SD
source-drain voltage I_S = 25 A; V_GS = 0 V; T_j = 25 °C; Fig. 16
t_rr
reverse recovery time I_S = 20 A; dI_S/dt = -100 A/µs; V_GS = 0 V;
Q_r
recovered charge
V_DS = 25 V
Min Typ Max Unit
-
8500 11340 pF
-
1620 1950 pF
-
985 1350 pF
-
42
-
ns
-
60
-
ns
-
121 -
ns
-
83
-
ns
-
4.5 -
nH
-
2.5 -
nH
-
7.5 -
nH
-
0.77 1.2 V
-
56
-
ns
-
94
-
nC
400
I_D
(A)
320
V_GS(V) =10
003aai069
7
6
5.5
10
R_DSon
(mΩ)
7.5
003aai070
240
5
5
160
2.5
80
4.5
4
0
0
0.5
1 _VDS(V) 1.5
0
0
5
10
15 _VGS(V) 20
Fig. 6.
T_j = 25 °C; t_p = 300 μs
Output characteristics; drain current as a
function of drain-source voltage; typical values
Fig. 7.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
BUK751R8-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 September 2012
© NXP B.V. 2012. All rights reserved
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