BUK751R8-40E_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

BUK751R8-40E
N-channel TrenchMOS standard level FET
11 September 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology.
This product has been designed and qualified to AEC Q101 standard for use in high
performance automotive applications.
1.2 Features and benefits
• AEC Q101 compliant
• Repetitive avalanche rated
• Suitable for thermally demanding environments due to 175 °C rating
• True standard level gate with VGS(th) rating of greater than 1V at 175 °C
1.3 Applications
• 12 V Automotive systems
• Electric and electro-hydraulic power steering
• Motors, lamps and solenoid control
• Start-Stop micro-hybrid applications
• Transmission control
• Ultra high performance power switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
V_GS = 10 V; T_mb = 25 °C; Fig. 1
P_tot
total power dissipation T_mb = 25 °C; Fig. 2
Static characteristics
R_DSon
drain-source on-state V_GS = 10 V; I_D = 25 A; T_j = 25 °C;
resistance
Fig. 11
Dynamic characteristics
Q_GD
gate-drain charge
V_GS = 10 V; I_D = 25 A; V_DS = 32 V;
Fig. 13; Fig. 14
[1] Continuous current is limited by package.
Min Typ Max Unit
-
-
40
V
[1]
-
-
120 A
-
-
349 W
-
1.5 1.8 mΩ
-
48.2 -
nC
Scan or click this QR code to view the latest information for this product