 English |
|
|
|
|
|
|
|
| BUK751R8-40E_15 Datasheet, PDF (4/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET | |||
| |||
| ◁ |
NXP Semiconductors
BUK751R8-40E
N-channel TrenchMOS standard level FET
103
IAL
(A)
102
10
1
003aag343
(1)
(2)
(3)
10-1
10-3
10-2
10-1
1
10
tAL (ms)
Fig. 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
104
ID
(A)
103
102
Limit RDSon = VDS / ID
003aai067
tp =10 µ s
100 µ s
10
1 ms
DC
10 ms
1
100 ms
10-1
10-1
1
10
102
VDS (V)
Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
6. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
Fig. 5
vertical in still air
BUK751R8-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 September 2012
Min Typ Max Unit
-
-
0.43 K/W
-
60
-
K/W
© NXP B.V. 2012. All rights reserved
4 / 13
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese