BUK436W-1000B Datasheet, PDF (6/7 Pages) NXP Semiconductors – PowerMOS transistor

Philips Semiconductors
PowerMOS transistor
Product specification
BUK436W-1000B
MECHANICAL DATA
Dimensions in mm
Net Mass: 5 g
3.5
21
max
16 max
5.3 max
1.8
5.3
7.3
o 3.5
max
15.5
max
seating
plane
4.0
15.5
max
min
12
3
2.2 max
3.2 max
1.1
5.45 5.45
2.5
0.4 M
0.9 max
Fig.15. SOT429 (TO247); pin 2 connected to mounting base.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for SOT429 envelopes.
3. Epoxy meets UL94 V0 at 1/8".
March 1998
6
Rev 1.000