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BUK436W-1000B Datasheet, PDF (2/7 Pages) NXP Semiconductors – PowerMOS transistor
◁
Philips Semiconductors
PowerMOS transistor
Product specification
BUK436W-1000B
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
V(BR)DSS
VGS(TO)
IDSS
IDSS
IGSS
RDS(ON)
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Zero gate voltage drain current
Gate source leakage current
Drain-source on-state
resistance
CONDITIONS
VGS = 0 V; ID = 0.25 mA
VDS = VGS; ID = 1 mA
VDS = 1000 V; VGS = 0 V; Tj = 25 ˚C
VDS = 1000 V; VGS = 0 V; Tj =125 ˚C
VGS = ±30 V; VDS = 0 V
VGS = 10 V; ID = 1.5 A
MIN.
1000
2.1
-
-
-
-
TYP.
-
3.0
2
0.1
10
4.5
MAX.
-
4.0
20
1.0
100
5.0
UNIT
V
V
µA
mA
nA
Ω
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
gfs
Forward transconductance
Ciss
Input capacitance
Coss
Output capacitance
Crss
Feedback capacitance
td on
Turn-on delay time
tr
Turn-on rise time
td off
Turn-off delay time
tf
Turn-off fall time
Ld
Internal drain inductance
Ld
Internal drain inductance
Ls
Internal source inductance
CONDITIONS
VDS = 25 V; ID = 1.5 A
VGS = 0 V; VDS = 25 V; f = 1 MHz
VDD = 30 V; ID = 2.3 A;
VGS = 10 V; RGS = 50 Ω;
Rgen = 50 Ω
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
MIN.
3.0
-
-
-
-
-
-
-
-
TYP.
4.3
1000
80
30
10
25
130
40
5
MAX.
-
1250
120
50
25
40
150
60
-
UNIT
S
pF
pF
pF
ns
ns
ns
ns
nH
-
5
-
nH
- 12.5 -
nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IDR
Continuous reverse drain
-
current
IDRM
Pulsed reverse drain current -
VSD
Diode forward voltage
IF = 3.5 A ; VGS = 0 V
trr
Reverse recovery time
IF = 3.5 A; -dIF/dt = 100 A/µs;
Qrr
Reverse recovery charge
VGS = 0 V; VR = 100 V
MIN. TYP. MAX. UNIT
-
-
3.5 A
-
-
14
A
-
1.0 1.3 V
- 1800 -
ns
-
12
-
µC
March 1998
2
Rev 1.000
 ▷