BUK436W-1000B Datasheet, PDF (5/7 Pages) NXP Semiconductors – PowerMOS transistor

Philips Semiconductors
PowerMOS transistor
Product specification
BUK436W-1000B
VGS / V
12
10
BUK456-1000
VDS / V =200
8
800
6
4
2
0
0
10
20
30
40
QG / nC
Fig.13. Typical turn-on gate-charge characteristics.
V_GS = f(Q_G); conditions: I_D = 3.5 A; parameter V_DS
IF / A
10
BUK456-1000A
8
150 C
25 C
6
4
2
0
0
1
2
VSDS / V
Fig.14. Typical reverse diode current.
I_F = f(V_SDS); conditions: V_GS = 0 V; parameter T_j
March 1998
5
Rev 1.000