BUJ100LR_15 Datasheet, PDF (6/12 Pages) NXP Semiconductors – NPN power transistor

NXP Semiconductors
2.0
V_CEsat
(V)
1.6
1.2
0.8
0.4
0
10^−2
10^−1
003aad548
T_j = 125 °C
T_j = 25 °C
T_j = −35 °C
1
10
I_C (A)
BUJ100LR
NPN power transistor
1.6
V_BEsat
(V)
1.4
003aad549
1.2
1.0 ^{Tj = 25 °C}
T_j = −35 °C
0.8
T_j = 125 °C
0.6
0.4
0.2
0
10^−2
10^−1
1
10
I_C (A)
Fig 6. Collector-emitter saturation voltage as a
function of collector current; typical values
10²
003aad546
T_j = 125 °C
h_FE
T_j = 25 °C T_j = −35 °C
10
Fig 7. Base-emitter saturation voltage as a function of
collector current; typical values
10²
003aad547
T_j = 125 °C
h_FE
T_j = 25 °C T_j = −35 °C
10
V_CE = 3 V
1
10^−3
10^−2
10^−1
(1)
(2)
(3)
1
10
I_C (A)
V_CE = 5 V
1
10^−3
10^−2
10^−1
(1)
(2)
(3)
1
10
I_C (A)
Fig 8. DC current gain as a function of collector
current; typical values
Fig 9. DC current gain as a function of collector
current; typical values
BUJ100LR
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 29 July 2010
© NXP B.V. 2010. All rights reserved.
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