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| BUJ100LR_15 Datasheet, PDF (5/12 Pages) NXP Semiconductors – NPN power transistor | |||
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NXP Semiconductors
BUJ100LR
NPN power transistor
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Static characteristics
ICES
collector-emitter cut-off
current
IEBO
emitter-base cut-off
current
VCEOsus
collector-emitter
sustaining voltage
VCEsat
collector-emitter
saturation voltage
VBEsat
hFE
base-emitter saturation
voltage
DC current gain
Dynamic characteristics
tf
fall time
Conditions
VBE = 0 V; VCE = 700 V; Tj = 125 °C
VEB = 9 V; IC = 0 A; Tlead = 25 °C
IB = 0 A; IC = 1 mA; LC = 25 mH;
Tlead = 25 °C; see Figure 4; see Figure 5
IC = 0.25 A; IB = 50 mA; Tlead = 25 °C;
see Figure 6
IC = 0.5 A; IB = 125 mA; Tlead = 25 °C;
see Figure 6
IC = 0.75 A; IB = 250 mA; Tlead = 25 °C;
see Figure 6
IC = 0.25 A; IB = 50 mA; Tlead = 25 °C;
see Figure 7
IC = 0.5 A; IB = 125 mA; Tlead = 25 °C;
see Figure 7
IC = 0.5 mA; VCE = 2 V; Tlead = 25 °C
IC = 0.4 A; VCE = 5 V; Tlead = 25 °C;
see Figure 8; see Figure 9
IC = 0.8 A; VCE = 5 V; Tlead = 25 °C;
see Figure 8; see Figure 9
IC = 1 A; IBon = 200 mA; VBB = -5 V;
LB = 1 µH; Tlead = 25 °C; inductive load;
see Figure 10; see Figure 11
Min Typ Max Unit
-
-
5
mA
-
-
1
mA
400 -
-
V
-
0.2 0.5 V
-
0.3 1
V
-
0.4 1.5 V
-
-
1
V
-
-
1.2 V
12 -
-
10 -
30
5
7.5 20
-
80
-
ns
6V
30 Hz to 60 Hz
300 Ω
50 V
100 Ω to 200 Ω
horizontal
oscilloscope
vertical
1Ω
001aab987
Fig 4. Test circuit for collector-emitter sustaining
voltage
IC
(mA)
250
100
10
0
min VCE (V)
VCEOsus
001aab988
Fig 5. Oscilloscope display for collector-emitter
sustaining voltage test waveform
BUJ100LR
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 â 29 July 2010
© NXP B.V. 2010. All rights reserved.
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