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BTA208X-1000C Datasheet, PDF (6/12 Pages) NXP Semiconductors – Three quadrant triacs high commutation
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Philips Semiconductors
BTA208X-1000C
Three quadrant triacs high commutation
7. Characteristics
Table 6: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Static characteristics
IGT
gate trigger current VD = 12 V; IT = 0.1 A; see Figure 8 [1]
T2+ G+
2
T2+ G−
2
T2− G−
2
IL
latching current
VD = 12 V; IGT = 0.1 A; see
Figure 10
T2+ G+
-
T2+ G−
-
T2− G−
-
IH
holding current
VD = 12 V; IGT = 0.1 A; see
-
Figure 11
VT
on-state voltage
VGT
gate trigger voltage
ID
off-state current
Dynamic characteristics
IT = 10 A; see Figure 9
VD = 12 V; IT = 0.1 A; see Figure 7
VD = 400 V; IT = 0.1 A; Tj = 125 °C
VD = VDRM(max); Tj = 125 °C
-
-
0.25
-
dVD/dt
rate of rise of off-state VDM = 67 % VDRM(max);
voltage
Tj = 125 °C; exponential waveform;
gate open circuit
1 000
dIcom/dt
rate of change of
VDM = 400 V; Tj = 125 °C;
12
commutating current IT(RMS) = 8 A; without snubber;
gate open circuit; see Figure 12
tgt
gate-controlled
ITM = 12 A; VD = VDRM(max);
-
turn-on time
IG = 0.1 A; dIG/dt = 5 A/µs
[1] Device will not trigger in the T2− G+ quadrant.
Typ
6
13
23
25
48
30
20
1.3
0.7
0.4
0.1
4 000
32
2
Max
35
35
35
50
75
50
50
1.65
1.5
-
0.5
-
-
-
Unit
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
V/µs
A/ms
µs
BTA208X-1000C_1
Product data sheet
Rev. 01 — 4 October 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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