BTA208X-1000C Datasheet, PDF (2/12 Pages) NXP Semiconductors – Three quadrant triacs high commutation

Philips Semiconductors
BTA208X-1000C
Three quadrant triacs high commutation
3. Ordering information
Table 2: Ordering information
Type number
Package
Name
BTA208X-1000C
TO-220F
Description
plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3-lead TO-220 ‘full pack’
4. Limiting values
Version
SOT186A
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DRM
I_T(RMS)
repetitive peak off-state voltage
RMS on-state current
full sine wave; T_h ≤ 73 °C; see
Figure 4 and 5
I_TSM
non-repetitive peak on-state current full sine wave; T_j = 25 °C prior
to surge; see Figure 2 and 3
t = 20 ms
t = 16.7 ms
I²t
I²t for fusing
t = 10 ms
dl_T/dt
I_GM
P_GM
P_G(AV)
T_stg
T_j
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
I_TM = 12 A; I_G = 0.2 A;
dI_G/dt = 0.2 A/µs
over any 20 ms period
Min
Max
Unit
-
1 000
V
-
8
A
-
65
A
-
71
A
-
21
A²s
-
100
A/µs
-
2
A
-
5
W
-
0.5
W
−40
+150
°C
-
125
°C
BTA208X-1000C_1
Product data sheet
Rev. 01 — 4 October 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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