BFQ68 Datasheet, PDF (6/10 Pages) NXP Semiconductors – NPN 4 GHz wideband transistor

Philips Semiconductors
NPN 4 GHz wideband transistor
Product specification
BFQ68
handbook, h⁶alfpage
Cc
(pF)
4
MEA271
2
0
0
10
VCB (V)
20
I_E = i_e = 0; f = 1 MHz
Fig.5 Collector capacitance as a function of
collector-base voltage.
handbook,⁴h⁰alfpage
gain
(dB)
30
MEA270
20
10
0
0.1
G _UM
Is _12I ²
1
f (GHz)
10
I_C = 240 mA; V_CE = 15 V; T_amb = 25 °C
Fig.6 Gain as a function of frequency.
20
handbook, halfpage
d im
(dB)
30
MEA269
40
50
60
70
0
100
200
300
I _C (mA)
V_CE = 15 V; V_o = 1.6 V; f_(p+q−r) = 793.25 MHz.
Fig.7 Intermodulation distortion as a function of
collector current.
September 1995
6