BFQ68 Datasheet, PDF(4/10 Page) NXP Semiconductors

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BFQ68 Datasheet, PDF (4/10 Pages) NXP Semiconductors – NPN 4 GHz wideband transistor

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Philips Semiconductors

NPN 4 GHz wideband transistor

Product speciï¬cation

BFQ68

CHARACTERISTICS

Tj = 25 Â°C unless otherwise speciï¬ed.

SYMBOL

PARAMETER

ICBO

collector cut-off current

hFE

DC current gain

transition frequency

collector capacitance

emitter capacitance

Cre

feedback capacitance

Ccs

collector-stud capacitance

GUM

maximum unilateral power gain

(note 2)

output voltage

PL1

output power at 1 dB gain

compression (see Fig.2)

ITO

third order intercept point (see

Fig.2)

CONDITIONS

IE = 0; VCB = 15 V

IC = 240 mA; VCE = 15 V

IC = 240 mA; VCE = 15 V;

f = 500 MHz

IE = ie = 0; VCB = 15 V; f = 1 MHz

IC = ic = 0; VEB = 0.5 V; f = 1 MHz

IC = 0; VCE = 15 V; f = 1 MHz

note 1

IC = 240 mA; VCE = 15 V;

f = 800 MHz; Tamb = 25 Â°C

note 3

IC = 240 mA; VCE = 15 V; RL = 75 â¦;

Tamb = 25 Â°C;

measured at f = 800 MHz

note 4

MIN. TYP. MAX. UNIT

50 ÂµA

25 75 â

GHz

3.8 â

20 â

2.3 â

0.8 â

13 â

1.6 â

28 â

dBm

47 â

dBm

Notes

1. Measured with emitter and base grounded.

2. GUM is the maximum unilateral power gain, assuming S12 is zero and

GUM = 10 log -ï£ï£«---1-----â------S----1---1----2S---ï£¸ï£¶-2--ï£ï£«-1---1-2----â------S----2--2-----2--ï£¸ï£¶-- dB.

3. dim = â60 dB (see Figs 2 and 7) (DIN 45004B); IC = 240 mA; VCE = 15 V; RL = 75 â¦; Tamb = 25 Â°C;

Vp = Vo at dim = â60 dB; fp = 795.25 MHz;

Vq = Vo â6 dB; fq = 803.25 MHz;

Vr = Vo â6 dB; fr = 805.25 MHz;

measured at f(p+qâr) = 793.25 MHz.

4. IC = 240 mA; VCE = 15 V; RL = 75 â¦; Tamb = 25 Â°C;

Pp = ITO â 6 dB; fp = 800 MHz;

Pq = ITO â 6 dB; fq = 801 MHz;

measured at f(2qâp) = 802 MHz and at f(2pâq) = 799 MHz.

September 1995

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