BFQ68 Datasheet, PDF (3/10 Pages) NXP Semiconductors – NPN 4 GHz wideband transistor

Philips Semiconductors
NPN 4 GHz wideband transistor
Product specification
BFQ68
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
up to T_c = 110 °C
THERMAL RESISTANCE
SYMBOL
R_{th j-c}
PARAMETER
thermal resistance from junction to case
MIN.
−
−
−
−
−
−65
−
MAX. UNIT
25
V
18
V
2
V
300 mA
4.5
W
150 °C
200 °C
THERMAL RESISTANCE
20 K/W
September 1995
3