BFQ34 Datasheet, PDF (6/10 Pages) NXP Semiconductors – NPN 4 GHz wideband transistor

Philips Semiconductors
NPN 4 GHz wideband transistor
Product specification
BFQ34
handbook,⁴h⁰alfpage
gain
(dB)
30
MEA319
20
10
0
10 ^–1
G _UM
Is₁₂ I ²
1
f (GHz)
10
I_c = 120 mA; V_CE = 15 V; T_amb = 25 °C.
Fig.6 Gain as a function of frequency.
handbook,²h⁰alfpage
d _im
(dB)
30
MEA321
40
50
60
70
50
100
I _C (mA)
150
V_o = 1.2 V; V_CE = 15 V; f_(p+q−r) = 793.25 MHz
Fig.7 Intermodulation distortion as a function of
collector current.
September 1995
6