BFQ34 Datasheet, PDF (2/10 Pages) NXP Semiconductors – NPN 4 GHz wideband transistor

Philips Semiconductors
NPN 4 GHz wideband transistor
DESCRIPTION
NPN transistor encapsulated in a 4
lead SOT122A envelope with a
ceramic cap. All leads are isolated
from the stud.
It is primarily intended for driver and
final stages in MATV system
amplifiers. It is also suitable for use in
low power band IV and V equipment.
Diffused emitter-ballasting resistors
and the application of gold sandwich
metallization ensure an optimum
temperature profile and excellent
reliability properties. The device also
features high output voltage
capabilities.
PINNING
PIN
DESCRIPTION
Code: BFQ34/01
1 collector
2 emitter
3 base
4 emitter
Product specification
BFQ34
lfpage
4
1
3
Top view
2
MBK187
Fig.1 SOT122A.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CBO
V_CEO
I_C
P_tot
f_T
V_o
collector-base voltage
collector-emitter voltage
collector current
total power dissipation
transition frequency
output voltage
P_L1
output power at 1 dB gain
compression
ITO
third order intercept point
CONDITIONS
TYP.
open emitter
−
open base
−
−
up to T_c = 160 °C
−
I_C = 150 mA; V_CE = 15 V; f = 500 MHz 4
I_C = 120 mA; V_CE = 15 V; R_L = 75 Ω; 1.2
T_amb = 25 °C; d_im = −60 dB
f_(p+q-r) = 793.25 MHz
I_C = 120 mA; V_CE = 15 V; R_L = 75 Ω; 26
f = 800 MHz; T_amb = 25 °C
I_C = 120 mA; V_CE = 15 V; R_L = 75 Ω; 45
T_amb = 25 °C
MAX.
25
18
150
2.7
−
−
−
−
UNIT
V
V
mA
W
GHz
V
dBm
dBm
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All
persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
September 1995
2