BFQ34 Datasheet, PDF (3/10 Pages) NXP Semiconductors – NPN 4 GHz wideband transistor

Philips Semiconductors
NPN 4 GHz wideband transistor
Product specification
BFQ34
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
up to T_c = 160 °C
MIN. MAX. UNIT
−
25
V
−
18
V
−
2
V
−
150 mA
−
2.7 W
−65 150 °C
−
200 °C
THERMAL RESISTANCE
SYMBOL
R_{th j-c}
PARAMETER
thermal resistance from junction to case
THERMAL RESISTANCE
15 K/W
September 1995
3