BFG197 Datasheet, PDF (6/13 Pages) NXP Semiconductors – NPN 7 GHz wideband transistor

Philips Semiconductors
NPN 7 GHz wideband transistor
Product specification
BFG197; BFG197/X;
BFG197/XR
handbook, h⁴alfpage
F
(dB)
3
2
1
0
1
MCD161
f = 2 GHz
1 GHz
500 MHz
10
100
IC (mA)
V_CE = 6 V.
Fig.11 Minimum noise figure as a function of
collector current.
4
handbook, halfpage
F
(dB)
3
2
IC = 50 mA
20 mA
1
10 mA
0
10 ²
MCD162
10³
10 ⁴
f (MHz)
V_CE = 6 V.
Fig.12 Minimum noise figure as a function of
frequency.
handbook,⁴h⁵alfpage
d _im
(dB)
50
MBB266
55
60
65
70
20
40
60
80
100
120
I _C (mA)
handbook,³h⁵alfpage
d2
(dB)
40
MBB268
45
50
55
60
20
40
60
80
100
120
I _C (mA)
V_CE = 8 V ; V_o = 700 mV; f_(p+q−r) = 793.25 MHz; T_amb = 25 °C.
Fig.13 Intermodulation distortion, typical values.
V_CE = 8 V; V_o = 50 mV; f_(p+q−r) = 810 MHz; T_amb = 25 °C.
Fig.14 Second order intermodulation distortion,
typical values.
1995 Sep 13
6