BFG197 Datasheet, PDF (2/13 Pages) NXP Semiconductors – NPN 7 GHz wideband transistor

Philips Semiconductors
NPN 7 GHz wideband transistor
FEATURES
• High power gain
• Low noise figure
• Gold metallization ensures
excellent reliability.
DESCRIPTION
The BFG197 is a silicon NPN
transistor in a 4-pin, dual-emitter
plastic SOT143 envelope. It is
primarily intended for wideband
applications in the GHz range, such
as satellite TV systems and repeater
amplifiers in fibre-optic systems.
PINNING
PIN
DESCRIPTION
BFG197 (Fig.1) Code: V5
1 collector
2 base
3 emitter
4 emitter
BFG197/X (Fig.1) Code: V13
1 collector
2 emitter
3 base
4 emitter
BFG197A/XR (Fig.2) Code: V35
1 collector
2 emitter
3 base
4 emitter
Product specification
BFG197; BFG197/X;
BFG197/XR
handbook, 2 c4olumns
3
1
Top view
2
MSB014
Fig.1 SOT143.
handbook, 2 co3lumns
4
2
Top view
1
MSB035
Fig.2 SOT143XR.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
I_C
P_tot
C_re
f_T
G_UM
F
collector-base voltage
collector-emitter voltage
collector current
total power dissipation
feedback capacitance
transition frequency
maximum unilateral
power gain
noise figure
open emitter
open base
DC value
up to T_s = 75 °C; note 1
I_C = i_c = 0; V_CB = 8 V; f = 1 MHz
I_C = 50 mA; V_CE = 4 V; f = 2 GHz
I_C = 50 mA; V_CE = 6 V;
T_amb = 25 °C; f = 1 GHz
I_C = 50 mA; V_CE = 6 V;
T_amb = 25 °C; f = 2 GHz
Γ_s = Γ_opt; I_C = 15 mA; V_CE = 8 V;
T_amb = 25 °C; f = 1 GHz
Note
1. T_S is the temperature at the soldering point of the collector tab.
MIN.
−
−
−
−
−
−
−
TYP.
−
−
−
−
0.85
7.5
16
MAX.
20
10
100
350
−
−
−
UNIT
V
V
mA
mW
pF
GHz
dB
−
10
−
dB
−
1.7
−
dB
1995 Sep 13
2