BFG197 Datasheet, PDF (3/13 Pages) NXP Semiconductors – NPN 7 GHz wideband transistor

Philips Semiconductors
NPN 7 GHz wideband transistor
Product specification
BFG197; BFG197/X;
BFG197/XR
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
storage temperature range
junction operating temperature
open emitter
open base
open collector
DC value, continuous
up to T_s = 75 °C; note 1
MIN.
−
−
−
−
−
−65
−
MAX. UNIT
20
V
10
V
2.5 V
100 mA
350 mW
+150 °C
175 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-s}
from junction to soldering point; note 1
Note
1. T_S is the temperature at the soldering point of the collector tab.
VALUE
290
UNIT
K/W
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
I_CBO
collector leakage current
h_FE
DC current gain
C_c
collector capacitance
C_e
emitter capacitance
C_re
feedback capacitance
f_T
transition frequency
G_UM
maximum unilateral power gain
(note 1)
F
noise figure
d₂
second order intermodulation
distortion
CONDITIONS
I_E = 0; V_CB = 5 V
I_C = 50 mA; V_CE = 5 V
I_E = i_e = 0; V_CB = 8 V; f = 1 MHz
I_C = i_c = 0; V_EB = 0.5 V; f = 1 MHz
I_C = i_c = 0; V_CB = 8 V; f = 1 MHz
I_C = 50 mA; V_CE = 4 V; f = 2 GHz
I_C = 50 mA; V_CE = 6 V;
T_amb = 25 °C; f = 1 GHz
I_C = 50 mA; V_CE = 6 V;
T_amb = 25 °C; f = 2 GHz
Γ_s = Γ_opt; I_C = 15 mA; V_CE = 8 V;
T_amb = 25 °C; f = 1 GHz
Γ_s = Γ_opt; I_C = 50 mA; V_CE = 6 V;
T_amb = 25 °C; f = 2 GHz
V_CE = 6 V;V_o = 50 dBmV;
MIN.
−
40
−
−
−
−
−
−
−
−
−
TYP.
−
110
1.5
3.3
0.85
7.5
16
10
1.7
2.3
−51
MAX. UNIT
100 nA
−
−
pF
−
pF
−
pF
−
GHz
−
dB
−
dB
−
dB
−
dB
−
dB
Note
1. G_UM is the maximum unilateral power gain, assuming S₁₂ is zero and
G_UM
=
10
log --₍--1-----_–------s---₁---₁----₂^s---₎-²--¹-₍---1-²----_–------s---₂--₂-----₂---₎-
dB.
1995 Sep 13
3