BFG11 Datasheet, PDF (6/12 Pages) NXP Semiconductors – NPN 2 GHz RF power transistor

Philips Semiconductors
NPN 2 GHz RF power transistor
Product specification
BFG11; BFG11/X
SPICE parameters for the BFG11 crystal
SEQUENCE No. PARAMETER VALUE UNIT
1
IS
3.338 fA
2
BF
97.14 −
3
NF
0.988 −
4
VAF
31.40 V
5
IKF
51.45 A
6
ISE
23.53 pA
7
NE
2.386 −
8
BR
13.73 −
9
NR
0.989 −
10
VAR
2.448 V
11
IKR
100.0 A
12
ISC
54.10 fA
13
14
15
16
17
18
19⁽¹⁾
20⁽¹⁾
21⁽¹⁾
NC
RB
IRB
RBM
RE
RC
XTB
EG
XTI
1.224 −
1.740 Ω
1.000 µA
1.740 Ω
59.65 mΩ
0.124 Ω
0.000 −
1.110 eV
3.000 −
22
CJE
9.555 pF
23
VJE
0.600 V
24
MJE
0.315 −
25
TF
12.96 ps
26
XTF
400.0 −
27
VTF
0.866 V
28
ITF
5.940 A
29
PTF
0.000 deg
30
CJC
4.274 pF
31
VJC
0.650 V
32
33
34⁽¹⁾
35⁽¹⁾
MJC
XCJC
TR
CJS
0.392 −
0.150 −
0.000 ns
0.000 F
SEQUENCE No.
36⁽¹⁾
37⁽¹⁾
38
PARAMETER
VJS
MJS
FC
VALUE UNIT
750.0 mV
0.000 −
0.742 −
Note
1. These parameters have not been extracted, the
default values are shown.
handbook, halfpage
C _cb
L1
B
C _be
LB
B' C'
E'
LE
L3
E
L2
C
Cce
MBC964
QL_B = 50; QL_E = 50; QL_B,E(f) = QL_B,E√(f/f_c);
f_c = scaling frequency = 100 MHz.
Fig.6 Package equivalent circuit SOT143.
List of components (see Fig.6)
DESIGNATION
C_be
C_cb
C_ce
L1
L2
L3
L_B
L_E
VALUE
84
17
191
0.12
0.21
0.06
0.95
0.40
UNIT
fF
fF
fF
nH
nH
nH
nH
nH
1995 Apr 07
6