BFG11 Datasheet, PDF (5/12 Pages) NXP Semiconductors – NPN 2 GHz RF power transistor

Philips Semiconductors
NPN 2 GHz RF power transistor
Product specification
BFG11; BFG11/X
APPLICATION INFORMATION
RF performance at T_amb = 25 °C in a common-emitter test circuit (see Fig.7).
MODE OF OPERATION
f
V_CE
I_CQ
(GHz)
(V)
(mA)
Pulsed, class-AB, duty cycle < 1 : 8
1.9
3.6
1
P_L
(mW)
400
G_p
(dB)
≥4
typ. 5
η_c
(%)
≥50
typ. 70
Ruggedness in class-AB operation
The BFG11 is capable of withstanding a load mismatch corresponding to VSWR = 8 : 1 through all phases, at rated
output power under pulsed conditions up to a supply voltage of 8 V, f = 1.9 GHz and a duty cycle of 1 : 8.
handbook, h⁸alfpage
Gp
(dB)
6
4
MLC849
100
η_c
η_c
(%)
80
Gp
60
handboo⁸k,⁰h⁰alfpage
PL
(mW)
600
400
MLC850
2
40
200
0
20
0
200
400
600
800
PL (mW)
Pulsed, class-AB operation.
V_CE = 3.6 V; V_BE = 0.65 V; f = 1.9 GHz; duty cycle < 1 : 8.
Circuit optimized for P_L = 400 mW.
Fig.4 Power gain and collector efficiency as
functions of load power; typical values.
0
0
100
200
300
PD (mW)
Pulsed, class-AB operation.
V_CE = 3.6 V; V_BE = 0.65 V; f = 1.9 GHz; duty cycle < 1 : 8.
Circuit optimized for P_L = 400 mW.
Fig.5 Load power as a function of drive power;
typical values.
1995 Apr 07
5