BFG11 Datasheet, PDF (4/12 Pages) NXP Semiconductors – NPN 2 GHz RF power transistor

Philips Semiconductors
NPN 2 GHz RF power transistor
Product specification
BFG11; BFG11/X
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CES
h_FE
C_c
C_re
collector-base breakdown voltage open emitter; I_C = 0.1 mA; I_E = 0 20
collector-emitter breakdown voltage open base; I_C = 10 mA; I_B = 0
8
emitter-base breakdown voltage
open collector; I_E = 0.1 mA; I_C = 0 2.5
collector cut-off current
V_CE = 8 V; V_BE = 0
−
DC current gain
I_C = 100 mA; V_CE = 5 V
25
collector capacitance
I_E = i_e = 0; V_CB = 3.6 V; f = 1 MHz −
feedback capacitance
I_C = 0; V_CE = 3.6 V; f = 1 MHz
−
MAX.
−
−
−
100
−
4
3
UNIT
V
V
V
µA
pF
pF
handbook, h⁴alfpage
Cc
(pF)
3
MLC848
2
1
0
0
2
4
6
8
10
VCB (V)
I_C = 0; f = 1 MHz.
Fig.3 Collector capacitance as a function of
collector-base voltage; typical values.
1995 Apr 07
4